The Institute for Electronics and Nanotechnology at Georgia Tech (IEN) is a unique, interdisciplinary research and educational institute comprised of state-of-the-art laboratories and globally recognized academic and research faculty, scientists, and technical support staff.

As an infrastructure resource, IEN is comprised of several unique, educational, fabrication and characterization laboratories for Nano, Micro, and Bio-device research enabling leading-edge human resource and technology development, from the basic discovery stage to prototype realization.

IEN, in concert with its affiliated centers and faculty, provides academia, industry and government users open access to more than $400M of state-of-the-art research tools and laboratories for education and technology transfer.

Researchers from any science or engineering discipline are invited to take advantage of our shared user laboratories, equipment and expertise, or conference areas to facilitate interdisciplinary research and the dissemination of information in the Electronics and Nanotechnology domains.

We welcome you to explore our facilities and the opportunities supported by our buildings and laboratories.

Assembly, Packaging and Reliability

 

 

 

 

 

Featured Staff

Devin Brown
E-Beam Support Lead, Senior Research Engineer at NNCI
devin.brown@ien.gatech.edu

EXPERTISE: 
Electron Beam Lithography; Nanofabrication
 
 

Accessing the Facilities

External users are researchers who have no affiliation with Georgia Tech.  This includes researchers from institutions other than Georgia Tech, government labs, and industry.  If you are coming from an academic or government institution, you will pay the same rates as Georgia Tech users. 

Prospective external users will need to first contact Dr. Paul Joseph (paul.joseph@ien.gatech.edu; 404-894-5029), who will walk you through the process of becoming one.

Featured Tool

The Elionix ELS G-100 is a high-speed, ultra high-precision thermal field emission (TFE) electron beam lithography system.

  • Generates patterns with a line width of 7nm
  • Stable 1.8nm electron beam using high beam current at 100kV
  • High beam positioning resolution
  • 20nm lines can be written over an entire 500μm field w/o stitching
  • 8 inch stage

Read More Here! 

Engage Nano Research

Dr. Oliver Brand
oliver.brand@ece.gatech.edu

Dr. David Gottfried
david.gottfried@ien.gatech.edu

Find the experts

Engage With IEN Research

Dr. Eric M. Vogel 
eric.vogel@mse.gatech.edu

Dr. George White
george.white@gatech.edu