Georgia Tech has made substantial physical and personnel investments in nanotechnology facilities and laboratory infrastructure that enable IEN to offer a myriad of laboratories and tools for use by the Georgia Tech community, other academic institutions, industry, and government agencies for research, fabrication, characterization, measurement, and testing needs.
As an integral partner of the National Nanotechnology Coordinated Infrastructure (NNCI); one of sixteen user facilities in the United States supported by the National Science Foundation; NNCI @ IEN provides support for nanoscale lithography, fabrication, synthesis, characterization, modeling, design, computation, and hands-on training via our shared user environment. Registration, training and fees are required to become a qualified user.
Marcus Nanotechnology Building Shared User Organic and Inorganic Cleanrooms
Unique in the Southeastern United States, the MNB contains both organic and inorganic fabrication and imaging systems, as well as characterization and measurement abilities for nano-scale features in organic and inorganic materials, devices, components, and systems. These facilities are open, shared user facilities.
Leveraging these shared user laboratories, the MNB contains a research wing which houses Micro and Nano research in support of Bio and Physical Devices and Systems Research, bringing together research teams from engineering, life sciences, and medical sciences to enable the discovery and development of nano-based next-generation technology, devices, and systems for the benefit of man-kind. Examples include but are not limited to devices and systems for early cancer diagnosis and treatment, medical diagnostics in low-resource settings, temperature and physical environment monitoring; including wireless connection for remote data acquisition.
Examples include but are not limited to devices and systems for early cancer diagnosis and treatment, medical diagnostics in low-resource settings, temperature and physical environment monitoring; including wireless connection for remote data acquisition.
Microelectronics Assembly & Reliability Laboratory
Located in the Fuller E. Callaway building, the Assembly & Reliability Laboratory provides class 10,000 to 100,000 cleanroom environments for the assembly processes needed in for research integration into functional sub-system test vehicles. In this laboratory, substrates are assembled into a complete sub-systems prior to thermal and reliability testing. Current capabilities of this laboratory include precision stencil printing, plasma substrate cleaning, precision chip and component placement and bonding by various techniques, mechanical substrate via drilling, component and substrate inspection via X-ray and acoustical techniques, materials dispense, and reliability testing.
Pettit Building Inorganic Cleanroom and Characterization Laboratories
The Pettit Building houses an eighty-five hundred square-foot cleanroom (75% class 1000, 25% class 10) for advanced device, microstructure, and circuit fabrication, including advanced nano-scale electron-beam lithography. Additionally, various workstation-based computer-aided design facilities, fully-equipped simulation and modeling facilities, and several laboratories for metrology and device characterization are available to all users.
Laser Micromachining Center
Laser Micromachining Center is managed by the MSMA research group and is located in the Bunger-Henry building. Four laser systems - IR, CO2, Excimer, and Chemical Etcher - are currently available. Supporting equipment for sample preparation and analysis are also available. The center is open to authorized GT and external users. We offer basic and advanced training sessions, and provide technical support.
Electronic Design Testbed Laboratory
Located in the Technology Square Research Building and operated by the Georgia Electronic Design Center, are a variety of RF, mm-wave and photonics test beds and testing facilities. Including the capability of providing very high-precision semiconductor active/passive device/circuits characterization including DC~170 GHz small-signal s-parameters and dedicated load-pull systems up to 110 GHz. Other capabilities include spectrum analysis up to 170 GHz and noise figure measurements up to 28 GHz