Shyh-Chiang Shen received his B.S. and M.S. degrees, both in Electrical Engineering, from National Taiwan University in 1993 and 1995, respectively. He received his Ph.D. degree in Electrical Engineering at the University of Illinois at Urbana-Champaign (UIUC) in 2001. During his graduate study at the University of Illinois, he was involved in the development of low-voltage RF MEMS switches and ion-implanted GaAs MESFET using E-beam direct gate-writing photolithography techniques.
Professor Shen joined Xindium Technologies, Inc. as a senior processing engineer in June 2001. He developed a proprietary high-performance InP SHBT technology for 40 Gb/s OEIC applications and InP-based power HBT technology for wireless communications. In August 2004, he joined the HSIC group at the University of Illinois as a postdoctoral research associate to work on exciting research projects. He joined the Georgia Institute of Technology in January 2005 and is currently an Associate Professor in the School of Electrical and Computer Engineering. Shen holds 7 awarded U.S. patents in the MEMS and microelectronics areas. He is an author or co-author of more than 120 publications in peer-reviewed technical journals and conferences. His current research is focused on wide bandgap semiconductor microelectronics and optoelectronic devices for high-energy-efficiency applications.
Research Areas of Interest:
- High sensitivity, nitride-based UV optoelectronics: detectors and emitters
- III-N-based high-voltage field-effect transistors
- III-N heterojunction bipolar transistors
- Advanced semiconductor device and integrated circuit manufacturing
- SiGe & GaN Devices